SIZF300DT-T1-GE3
SIZF300DT-T1-GE3
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SIZF300DT-T1-GE3
Product_Category
FET、MOSFET 阵列
制造商
Vishay / Siliconix
类型
MOSFET 2N-CH 30V 23A 8POWERPAIR
封装
Packages
卷带式 (TR)
RoHS
YES
价格
$0.4800
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Specifications
PDF(1)
类型描述
制造商Vishay / Siliconix
系列TrenchFET® Gen IV
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerWDFN
安装类型Surface Mount
配置2 N-Channel (Dual)
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
漏源电压 (Vdss)30V
电流 - 连续漏极 (Id) @ 25°C23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
输入电容 (Ciss)(最大值)@Vds1100pF @ 15V, 3150pF @ 15V
Rds On(最大)@Id、Vgs4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
栅极电荷 (Qg)(最大值)@Vgs22nC @ 10V, 62nC @ 10V
Vgs(th)(最大值)@Id2.2V @ 250µA
供应商设备包8-PowerPair® (6x5)
+86 15920035914
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