RN4990(TE85L,F)
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RN4990(TE85L,F)
Product_Category
双极晶体管阵列，预偏置
制造商
Toshiba Electronic Devices and Storage Corporation
类型
NPN + PNP BRT Q1BSR=4.7KOHM Q1BE
封装
Packages
卷带式 (TR)
RoHS
NO
价格
$0.0600
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Specifications
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-TSSOP, SC-88, SOT-363
安装类型Surface Mount
晶体管类型1 NPN, 1 PNP - Pre-Biased (Dual)
功率 - 最大200mW
集电极电流 (Ic)（最大）100mA
电压 - 集电极发射极击穿（最大）50V
Vce 饱和度（最大值）@Ib、Ic300mV @ 250µA, 5mA
电流 - 集电极截止（最大）100nA (ICBO)
直流电流增益 (hFE)（最小值）@ Ic、Vce120 @ 1mA, 5V
频率-转变250MHz, 200MHz
电阻器 - 基极 (R1)4.7kOhms
供应商设备包US6
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+86 15920035914
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