RN2118MFV(TPL3)
  • image of 单个预偏置双极晶体管> RN2118MFV(TPL3)
RN2118MFV(TPL3)
Product_Category
单个预偏置双极晶体管
制造商
Toshiba Electronic Devices and Storage Corporation
类型
TRANS PREBIAS PNP 50V 0.1A VESM
封装
Packages
切带 (CT)
RoHS
YES
价格
$0.2700
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Specifications
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列-
包裹切带 (CT)
产品状态ACTIVE
包装/箱SOT-723
安装类型Surface Mount
晶体管类型PNP - Pre-Biased
Vce 饱和度（最大值）@Ib、Ic300mV @ 500µA, 5mA
电流 - 集电极截止（最大）500nA
直流电流增益 (hFE)（最小值）@ Ic、Vce50 @ 10mA, 5V
供应商设备包VESM
集电极电流 (Ic)（最大）100 mA
电压 - 集电极发射极击穿（最大）50 V
功率 - 最大150 mW
电阻器 - 基极 (R1)47 kOhms
电阻器 - 发射极基极 (R2)10 kOhms
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